Liviu,
According to "Etch Rates for Micromachining Processing" (JMEMS V.5,#4),
COncentrated HF will etch "wet" Thermal Oxide at between 18000 and 23000
A/min. "dry" oxide should be similar.
Are you considering etching the buried oxide layer on an SOI wafer to
release it?
Jesse Fowler
  UCLA/MAE Dept., 420 Westwood Plaza, Room 37-129, ENGR IV
  Los Angeles, CA 90095-1597 | (310)825-3977
"We did our best but God didn't want to give us any goals."
 -- Saudi Arabian goalkeeper Mohammed Al-Deayea (World Cup 2002)

On Mon, 15 Jul 2002, NICU Liviu wrote:

> Dear MEMS experts,
>
> I'm looking for details concerning the etching speed of thermal SiO2
(especially
> burried SiO2 specific to SOI wafers) by using 49% HF.
>
> Could you give me any references or brief informations about this?
>
> Thanks a lot,
>
> Liviu
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