Francois,
1. The book, Principles of Semiconductor Photolithography by B. Moreau,
reference by 'ashiwalkar' also has a number of pointers to IBM's Technical
Disclosure bulletins that present this process. There is a lot of good
information in these references. Also try out "Introduction to
Microlithogaphy: Theory, Materials, and Processing" by Larry F. Thompson,
ISBN: 0841207755; May 1983.
2. The chlorobenze process works by 'leaching' out low molecular weight
polymers from the surface of the resist, thus hardening the material. The
hardenened material is less likely to reflow or change shape at temperatures
that are slightly above the 'reflow' level of the resist. It will not prevent
it from happening, only retard it. A bake following the chemical treatment is
helpful in 'hardening' the resist.
3. There are other techniques used for hardening the resist that you should
find in many of the latest photolithography books on the market that include
but are not limited to deep UV, electron beam, chemicals such as
chlorobenzene, hexamethyldisilazane, etc.
Clif
Clifford J. Hamel
Applications Engineer
(802) 244-5181, ext 297
>>> [email protected] 07/15/02 07:57AM >>>
Hi everybody
I have to lift off 200 nm thick SiO2 films deposited on various metalic
films. During the deposition of these films by sputtering, the substrate is
heated at temperatures around 100 0C and the lift off is quite difficult
without using a chlorobenzene treatment of the resist (the resist used is
S1813).
Concerning that point, is there somewhere (book or article) a good review
gathering the information about these treatments and the influence of the
different parameters?
It also exists commercial products to help the lift-off process (LOL by
Shipley or LOR by MCC). What are the advantages of these products compared
to the chlorobenzene solution?
Is it possible to strip theses products without using remover but just
aceton?
A 1500C bake seems necessary, is it possible to reduce this temperature?
Thanks in advance for your help...
Francois Montaigne (LPM, University of Nancy, France)
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