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MEMSnet Home: MEMS-Talk: Anodic bonding SOI wafer and glass
Anodic bonding SOI wafer and glass
2003-02-13
A.K.Ismail
2003-02-13
Tony Rogers
2003-03-02
zhliime
2003-02-13
Kristian Pontoppidan Larsen
2003-02-13
Blunier, Stefan
Anodic bonding SOI wafer and glass
Tony Rogers
2003-02-13
We have bonded similar structures at AML previously and would be happy to
run a trial for you.

regards

Tony

Tony Rogers
Applied Microengineering Ltd
173 Curie Avenue
Didcot
OX11 0QG
UK
Tel.: +44 (0)1235 833934
Fax: +44 (0)1235 833935
e-mail: [email protected]

Web:http://www.aml.co.uk

-----Original Message-----
From: [email protected]
[mailto:[email protected]]On Behalf Of A.K.Ismail
Sent: 13 February 2003 09:39
To: [email protected]
Subject: [mems-talk] Anodic bonding SOI wafer and glass


Hi,

Does anybody has experience of how to bond SOI wafer to glass wafer using
anodic bonding?
Our SOI wafer is about 175-450 micron Si, 1 micron Oxide and 1 micron Si p+.
The interface bonding layer would be the 1 micron Si p+ layer on SOI wafer
with another glass substrate. Your response would be appreciated.

Thank you.

A.K.Ismail



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