Dry etch: We use a mixture of Hydrogen and CF4 (I don't remember the
flow rates) 400 W RF at 13 MHz and 200 mTorr.

-Mike

>>> [email protected] 03/13/03 01:14AM >>>
Dear all,

Could anyone tell me how what to use for dry and wet etching of SiN
grown in PECVD (So there is probably some H in ther as well)

Thanks
Patrick Carlberg
__________________________________________________
Patrick Carlberg, Ph.D Student, MSc
Lund University, Solid State Physics/Nanometer Consortium
Box 118, SE-221 00 LUND, Sweden

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