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MEMSnet Home: MEMS-Talk: SV: [mems-talk] What is the etch rate of SU-8 in O2 plasma?
SV: [mems-talk] What is the etch rate of SU-8 in O2 plasma?
2003-03-13
Jacques Jonsmann
Re: SV: [mems-talk] What is the etch rate of SU-8 in O2 plasma?
2003-03-14
Isaac Wing Tak Chan
Re: SV: [mems-talk] What is the etch rate of SU-8 in O2 plasma?
2003-03-17
Nels P Ostrom
SV: [mems-talk] What is the etch rate of SU-8 in O2 plasma?
Jacques Jonsmann
2003-03-13
The residues you see are Antimony and antimonyoxide. It has a grey to black
powdery appearance. Usually it can be removed using ultrasound. The antimony
comes from the photo acid generator in the SU-8 which is an antimony salt.

Jacques Jonsmann


        -----Oprindelig meddelelse-----
        Fra: Isaac Wing Tak Chan [mailto:[email protected]]
        Sendt: ma 10-03-2003 17:00
        Til: General MEMS discussion
        Cc: S.O. Ryu
        Emne: Re: [mems-talk] What is the etch rate of SU-8 in O2 plasma?



        Hi,

                May I add a question? I've tried to ash SU-8 with O2 plasma in
        ICP/RIE system. But there is a film of residue on wafer. Have you seen
        such problem?

        Isaac


        On Fri, 7 Mar 2003 [email protected] wrote:

        > What type of reactor do you have? Is it a barrel asher or a single
wafer system. OUr experience with oxygen and su8 shows it will ash but it is
better if you have not done the second bake. This has been done in an icp/rie
system and the etch rate is a little less than other negative working
photoresists. Bob Henderson
        >
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        Yours sincerely,

        Isaac Chan

        Ph.D. Candidate
        Dept. Electrical & Computer Engineering
        University of Waterloo
        200 University Ave. W
        Waterloo, Ontario, Canada
        N2L 3V1
        Tel: (519) 729-6409, ext. 6014
        Fax: (519) 746-6321
        [email protected]
        http://www.ece.uwaterloo.ca/~a-sidic


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