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Material: Aluminum (Al), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Coefficient of static friction0.13Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.26Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000448 NUsed as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000687 NUsed as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Strain,limiting0.002Thin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Ultimate strength176 MPaelectron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides."Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187
Yield strength124 MPaelectron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides."Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187
Young's Modulus74.14 GPaSingle layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.Thin Solid Films,270(1995), p.263
Young's Modulus47.24 GPaSingle layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um.Thin Solid Films,270(1995), p.263
Young's Modulus59.26 GPaSingle layer deposited by DC planar magnetron sputtering onto 2 inch oxidized Si<111> wafers,using Ar as sputtering gas, Ar press=10 mT for film thickness from 0.1-2 um.Thin Solid Films,270(1995), p.263
Young's Modulus69 GPaUsed for electrothermal BimorphsIEEE Micro Electro Mechanical Systems Workshop,Feb 1993, Florida, p.25
Young's Modulus70 GPaThin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
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