Material: Aluminum (Al), film

To purchase MEMS-related materials, supplies, equipment, wafers, etc.,please visit the links section of the MEMSNet site.

Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Coefficient of static friction	0.13	Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction	0.26	Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)	0.000448 N	Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)	0.000687 N	Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Strain,limiting	0.002	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Ultimate strength	176 MPa	electron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides.	"Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187
Yield strength	124 MPa	electron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides.	"Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187
Young's Modulus	74.14 GPa	Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.	Thin Solid Films,270(1995), p.263
Young's Modulus	47.24 GPa	Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um.	Thin Solid Films,270(1995), p.263
Young's Modulus	59.26 GPa	Single layer deposited by DC planar magnetron sputtering onto 2 inch oxidized Si<111> wafers,using Ar as sputtering gas, Ar press=10 mT for film thickness from 0.1-2 um.	Thin Solid Films,270(1995), p.263
Young's Modulus	69 GPa	Used for electrothermal Bimorphs	IEEE Micro Electro Mechanical Systems Workshop,Feb 1993, Florida, p.25
Young's Modulus	70 GPa	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174