Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction
0.26
Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000448 N
Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)
0.000687 N
Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate.
IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Strain,limiting
0.002
Thin film,used in semiconductor fabrication.
IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Ultimate strength
176 MPa
electron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides.
"Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187
Yield strength
124 MPa
electron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides.
"Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187
Young's Modulus
74.14 GPa
Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um.
Thin Solid Films,270(1995), p.263
Young's Modulus
47.24 GPa
Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um.
Thin Solid Films,270(1995), p.263
Young's Modulus
59.26 GPa
Single layer deposited by DC planar magnetron sputtering onto 2 inch oxidized Si<111> wafers,using Ar as sputtering gas, Ar press=10 mT for film thickness from 0.1-2 um.
Thin Solid Films,270(1995), p.263
Young's Modulus
69 GPa
Used for electrothermal Bimorphs
IEEE Micro Electro Mechanical Systems Workshop,Feb 1993, Florida, p.25
Young's Modulus
70 GPa
Thin film,used in semiconductor fabrication.
IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174