Material: Gallium Arsenide (GaAs), bulk

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Density	5320 kg/m^3	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Dielectric constant	13.1	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Electrical resistivity,intrinsic	1e+06 Ω*m	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Heat capacity	47.02 J/mol/K	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Poisson's Ratio	0.31	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Refractive index	3.66	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Specific heat	350 J/kg/K	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Thermal conductivity	46 W/m/K	Properties at temp=300 K,wavelength not given for refractive index	Semiconductor Sensors,by S.M.Sze,UMC chair professor,John Wiley & Sons ,INC.Appendix D, p.535
Young's Modulus	85.5 GPa	At temp=300 K.	Semiconductor Sensors by S.M.Sze ,UMC chair professor,John Wiley & sons,INC.Appendix D, p.535