Material: Silicon Nitride (Si3N4), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Biaxial Modulus	249 .. 311 GPa	LPCVD film,used in microfabricated flow chambers for optical measurements, value obtained by direct measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.15um,	IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida, p.223
Density	3100 kg/m^3	Sputtered film,thickness=0.29 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um),assumi ng density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films.	IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249
Internal stress	0.99 .. 1.01 GPa	LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.	Sensors and Actuators,20(1989), p.138
Strain,limiting	0.037	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Stress	1440 MPa	LPCVD,temp=820 C,Nf=2.01,BHF etch rate<50(A/min),EDP etch rate=400(A/hr)	Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31
Stress,internal	0.11 GPa	PECVD film grown on 0.2 um LPCVD Silicon Nitride, calculated by using Load-Deflection of composite rectangular membranes,thickness=0.5 um.	Sensors and actuators,20(1989), p.138
Stress,residual	0.97 .. 1.03 GPa	LPCVD film,used in microfabricated flow chambers for optical measurements, value obtained by direct measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.15um,	IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida, p.223
Young's Modulus	380 GPa	Thin film,used in semiconductor fabrication.	IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Young's Modulus	210 GPa	PECVD film grown on 0.2 um LPCVD Silicon Nitride film, calculated by using Load-Deflection of composite rectangular membranes,thickness=0.5 um.	Sensors and actuators,20(1989), p.138
Young's Modulus	290 GPa	LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um.	Sensors and Actuators,20(1989), p.138
Young's Modulus	104 .. 156 GPa	Sputtered film,thickness=0.29 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um),assumi ng density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films.	IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249