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Material: Silicon Nitride (SiNx), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Coefficient of static friction0.15Used as a mover,min voltage to remove the mover=1150 V, bottom of the mover is glass plate,film condition=0.242-0.297um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.32Used as a mover,min voltage to remove the mover=1450 V,bottom of the mover is Silicon substrate,film condition:0.242-0.297 um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000538 NUsed as a mover,min voltage to remove the mover=1150 V, bottom of the mover is glass plate,film condition=0.242-0.297um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000855 NUsed as a mover,min voltage to remove the mover=1450 V,bottom of the mover is Silicon substrate,film condition:0.242-0.297 um & deposited by CVD method on silicon wafer.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
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