Material: Aluminum (Al), film
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| Property↑↓ | Value↑↓ | Conditions↑↓ | Reference↑↓ |
|---|---|---|---|
| Coefficient of static friction | 0.13 | Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.26 | Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.000448 N | Used as a mover,min voltage to move the mover=1050 V,bottom of the mover is glass plate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.000687 N | Used as mover,min voltage to remove the mover=1300 V,bottom of the mover is Silicon substrate,film condition:0.1976 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Strain,limiting | 0.002 | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |
| Ultimate strength | 176 MPa | electron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides. | "Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187 |
| Yield strength | 124 MPa | electron-beam evaporated on Si wafer held at room temperatu Thickness = 2 micrometer. Film is actually a trilayer with Ti "barrier" layers on both sides. | "Mechanical Behavior of Aluminum and Copper Thin Films," by David T. Read and James W. Dally, in Mechanics and Materials for Electronic Packaging: Volume 2, Thermal and Mechanical Behavior and Modeling, edited by M. Schen, H. Abe, and E. Suhir, American Society of Mechanical Engineers, AMD-Vol,1994, p.187 |
| Young's Modulus | 74.14 GPa | Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111>wafers at ambient temp., using Ar as sputtering gas,Ar press=2 mT,for film thickness from 0.1-2.0 um. | Thin Solid Films,270(1995), p.263 |
| Young's Modulus | 47.24 GPa | Single layer deposited by DC planar magnetron sputtering on to 2 inch oxidized Si<111> wafers at ambient temp., using Ar as sputtering gas,Ar press=5 mT,for film thickness from 0.1-2 um. | Thin Solid Films,270(1995), p.263 |
| Young's Modulus | 59.26 GPa | Single layer deposited by DC planar magnetron sputtering onto 2 inch oxidized Si<111> wafers,using Ar as sputtering gas, Ar press=10 mT for film thickness from 0.1-2 um. | Thin Solid Films,270(1995), p.263 |
| Young's Modulus | 69 GPa | Used for electrothermal Bimorphs | IEEE Micro Electro Mechanical Systems Workshop,Feb 1993, Florida, p.25 |
| Young's Modulus | 70 GPa | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |