Material: Amorphous Silicon (a-Si), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Strain,Compressive	0.0035 .. 0.0045	Thickness=300 nm,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.	J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Strain,Compressive	0.004 .. 0.005	Thickness=1.65um ,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.	J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,Compressive	0.8 .. 1 GPa	Thickness=300 nm,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.	J.Appl.Phys,Vol.54,No.8,August 1983, p.4675
Stress,Compressive	0.8 .. 1 GPa	Thickness=1.65um ,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer.	J.Appl.Phys,Vol.54,No.8,August 1983, p.4675