Material: Amorphous Silicon (a-Si), film
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| Property↑↓ | Value↑↓ | Conditions↑↓ | Reference↑↓ |
|---|---|---|---|
| Strain,Compressive | 0.0035 .. 0.0045 | Thickness=300 nm,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 |
| Strain,Compressive | 0.004 .. 0.005 | Thickness=1.65um ,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 |
| Stress,Compressive | 0.8 .. 1 GPa | Thickness=300 nm,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 |
| Stress,Compressive | 0.8 .. 1 GPa | Thickness=1.65um ,oxide type=1.1 um thermally grown,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 |