Material: Boron Nitride (BN), film
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| Property↑↓ | Value↑↓ | Conditions↑↓ | Reference↑↓ |
|---|---|---|---|
| Hardness | 4.2 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+17 per cm2,observed phases=B & TiB2. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 1.6 GPa | prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load noindentation method,Ti dose=1E+17 per cm2, observed phases=B & TiB2,annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 1.7 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low nanoindentation method,Ti dose=3E+17 per cm2,observed phases=TiN & TiB2,annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 8.8 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method, Ti dose=3E+17 per cm2,observed phases=TiN & TiB2. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 21.4 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 20.9 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti,annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 14.4 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=3E+18 per cm2,observed phases= Ti, annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Hardness | 21.9 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction ultra-low load nanoindentation method Ti dose=3E+18 per cm2,observed phases= Ti. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 93 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+17 per cm2,observed phases=B & TiB2. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 65 GPa | prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load noindentation method,Ti dose=1E+17 per cm2, observed phases=B & TiB2,annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 30 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low nanoindentation method,Ti dose=3E+17 per cm2,observed phases=TiN & TiB2,annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 120 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method, Ti dose=3E+17 per cm2,observed phases=TiN & TiB2. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 192 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 187 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=1E+18 per cm2,observed phases=TiN & Ti,annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 184 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction and ultra-low load nanoindentation method,Ti dose=3E+18 per cm2,observed phases= Ti, annealed at 773K for 3 hours. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 241 GPa | Prepared by rf sputtering method on Si and then ion implanted with Ti,values measured by X-ray diffraction ultra-low load nanoindentation method Ti dose=3E+18 per cm2,observed phases= Ti. | Vacuum,Vol 46,number 8-10,1995, p.953 |
| Young's Modulus | 35 .. 284 GPa | Obtained from laser induced ultrasonic surface wave method for a thickness of 0.1-0.2 um,choosing an intermediate density. | Thin Solid Films 290-291(1996), p.309 |
| Young's Modulus | 600 GPa | Cubic,value obtained from laser induced ultrasonic surface wave method,considering average density. | Thin solid films 290-291(1996), p.305 |
| Young's Modulus | 35 GPa | Hexagonal,value obtained from laser induced ultrasonic surface wave method,considering average density. | Thin solid films 290-291(1996), p.306 |
| Young's Modulus | 600 GPa | Cubic,value obtained by IBAD technology,depositing on a silicon wafer,film thickness=120nm. | Thin Solid Films 290-291(1996), p.310 |
| Young's Modulus | 35 GPa | Purely hexagonal,value obtained by laser induced ultrasonic surface wave method depositing on a silicon wafer,film thickness=120nm. | Thin Solid Films 290-291(1996), p.310 |
| Young's Modulus | 600 GPa | Purely cubic,value obtained by laser induced ultra sonic surface wave method,depositing on a silicon wafer,film thickness=120nm. . | Thin Solid Films 290-291(1996), p.310 |