|
To purchase MEMS-related materials, supplies, equipment, wafers, etc.,
please visit the links section of the MEMSNet site.
| Property | Value | Conditions | Reference |
|---|
| Elastic recovery during unloading | 0.82 | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge.Substrate Si(001),temp=400C, N2 press=10 mTorr,Bias=-57 V,values obtained by using nano-indentation method and calculations from load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Elastic recovery during unloading | 0.73 | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=7 mTorr,Bias=-7.5 V,values obtained by using nano indentation method and calculated by load-displacement curves.(sample analysed by RBS method had 21% nitrogen). | Thin Solid Films,246(1994), p.108 | | Elastic recovery during unloading | 0.74 | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=9 mTorr,Bias=-7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Elastic recovery during unloading | 0.65 | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=8 mTorr,Bias=7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Elastic recovery during unloading | 0.55 | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=150C, N2 press=10 mTorr,Bias=-54 V,values obtained by using nano-indentation method and calculated from load-displacement curves.(sample analysed with RBS had 27% nitrogen). | Thin Solid Films,246(1994), p.108 | | Hardness,load-off | 213 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge.Substrate Si(001),temp=400C, N2 press=10 mTorr,Bias=-57 V,values obtained by using nano-indentation method and calculations from load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Hardness,load-off | 128 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=7 mTorr,Bias=-7.5 V,values obtained by using nano indentation method and calculated by load-displacement curves.(sample analysed by RBS method had 21% nitrogen). | Thin Solid Films,246(1994), p.108 | | Hardness,load-off | 128 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=9 mTorr,Bias=-7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Hardness,load-off | 56.7 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=8 mTorr,Bias=7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Hardness,load-off | 36.3 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=150C, N2 press=10 mTorr,Bias=-54 V,values obtained by using nano-indentation method and calculated from load-displacement curves.(sample analysed with RBS had 27% nitrogen). | Thin Solid Films,246(1994), p.108 | | Hardness,load-on | 7 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge.Substrate Si(001),temp=400C, N2 press=10 mTorr,Bias=-57 V,values obtained by using nano-indentation method and calculations from load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Hardness,load-on | 9.1 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=7 mTorr,Bias=-7.5 V,values obtained by using nano indentation method and calculated by load-displacement curves.(sample analysed by RBS method had 21% nitrogen). | Thin Solid Films,246(1994), p.108 | | Hardness,load-on | 8.5 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=9 mTorr,Bias=-7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Hardness,load-on | 7.1 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=500C, N2 press=8 mTorr,Bias=7.5 V,values obtained by using nano-indentation method and calculated by load-displacement curves. | Thin Solid Films,246(1994), p.108 | | Hardness,load-on | 7.5 GPa | Using unbalanced magnetron sputtering system by reactive sputtering of C in N2 discharge,substrate Si(001),temp=150C, N2 press=10 mTorr,Bias=-54 V,values obtained by using nano-indentation method and calculated from load-displacement curves.(sample analysed with RBS had 27% nitrogen). | Thin Solid Films,246(1994), p.108 |
|
MEMS and Nanotechnology Clearinghouse
