Material: LTO (planarizing low temperature oxide), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Stress	-130 MPa	Temp=420 C,Nf=1.455,thickness=1um ,used in CMOS circuitry, BHF etch rate=4070(A/min),EDP etch rate=485(A/hr)	Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31