logo
Material: LTO (planarizing low temperature oxide), film

To purchase MEMS-related materials, supplies, equipment, wafers, etc., please visit the links section of the MEMSNet site.

PropertyValueConditionsReference
Stress-130 MPaTemp=420 C,Nf=1.455,thickness=1um ,used in CMOS circuitry, BHF etch rate=4070(A/min),EDP etch rate=485(A/hr)Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31