Material: Oxide induced layer in polysilicon, film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Stress	140 MPa	Oxide thickness=2.3um,polysilicon thickness=2.5um, oxidation temp=1000C,oxidation time=107min,deflection of 110um beam=0.74um	IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347
Stress	120 MPa	Oxide thickness=3.9 um,polysilicon thickness=5 um, oxidation temp=1000C,oxidation time=107min,deflection of 110um beam=0.68 um	IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347
Stress	120 MPa	Oxide thickness=4 um,polysilicon thickness=7.5 um, oxidation temp=1000C,oxidation time=107min,deflection of 110um beam=0.66 um	IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347
Stress	160 MPa	Oxide thickness=5.4 um,polysilicon thickness=10 um, oxidation temp=1000 C,oxidation time=300 min,deflection of 110um beam=0.62 um	IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347