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To purchase MEMS-related materials, supplies, equipment, wafers, etc.,
please visit the links section of the MEMSNet site.
| Property | Value | Conditions | Reference |
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| Stress | 140 MPa | Oxide thickness=2.3um,polysilicon thickness=2.5um, oxidation temp=1000C,oxidation time=107min,deflection of 110um beam=0.74um | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347 | | Stress | 120 MPa | Oxide thickness=3.9 um,polysilicon thickness=5 um, oxidation temp=1000C,oxidation time=107min,deflection of 110um beam=0.68 um | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347 | | Stress | 120 MPa | Oxide thickness=4 um,polysilicon thickness=7.5 um, oxidation temp=1000C,oxidation time=107min,deflection of 110um beam=0.66 um | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347 | | Stress | 160 MPa | Oxide thickness=5.4 um,polysilicon thickness=10 um, oxidation temp=1000 C,oxidation time=300 min,deflection of 110um beam=0.62 um | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347 |
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