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| Property | Value | Conditions | Reference |
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| Coherently diffracting domains,CDD | 4.9 nm | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by Warren-Averbach method. | Thin Solid Films,275(1996), p.23 | | Coherently diffracting domains,CDD | 4 nm | Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec,values obtained by Warren-Averbach method. | Thin Solid Films 275(1996), p.23 | | Coherently diffracting domains,CDD | 8.8 nm | Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec, values obtained by Gauss method. | Thin Solid Films,275(1996), p.23 | | Coherently diffracting domains,CDD | 10 nm | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4nm/sec, values obtained by Gauss method. | Thin Solid Films,275(1996), p.23 | | Coherently diffracting domains,CDD | 10.9 nm | Thick film,150 nm polycrystalline Pt film on Si<100> substrate,deposited by electron beam evaporation method at a rate of 0.1nm/sec, values obtained by Gauss method. | Thin Solid Films,275(1996), p.23 | | Microdistortions | 0.0029 | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by Warren-Averbach method. | Thin Solid Films,275(1996), p.23 | | Microdistortions | 0.0006 | Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec,values obtained by Warren-Averbach method. | Thin Solid Films 275(1996), p.23 | | Microdistortions | 0.001 | Thick film,150 nm polycrystalline Pt on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7nm/sec, values obtained by Gauss method. | Thin Solid Films,275(1996), p.23 | | Microdistortions | 0.002 | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4nm/sec, values obtained by Gauss method. | Thin Solid Films,275(1996), p.23 | | Microdistortions | 0.0032 | Thick film,150 nm polycrystalline Pt film on Si<100> substrate,deposited by electron beam evaporation method at a rate of 0.1nm/sec, values obtained by Gauss method. | Thin Solid Films,275(1996), p.23 | | Strain,limiting | 0.001 | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 | | Stress,internal | 185 .. 275 MPa | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by X-Ray diffraction analysis. | Thin Solid Films, 275(1996), p.23 | | Stress,internal | 499 .. 673 MPa | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4 nm/sec, values obtained by X-Ray diffraction analysis. | Thin Solid Films,275(1996), p.23 | | Stress,internal | 739 .. 955 MPa | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7 nm/sec, values obtained by X-Ray diffraction analysis. | Thin Solid Films,275(1996), p.23 | | Stress-free lattice parameter | 0.3919 .. 0.3921 nm | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.1 nm/sec, values obtained by X-Ray diffraction analysis. | Thin Solid Films, 275(1996), p.23 | | Stress-free lattice parameter | 0.3919 .. 0.3921 nm | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.4 nm/sec, values obtained by X-Ray diffraction analysis. | Thin Solid Films,275(1996), p.23 | | Stress-free lattice parameter | 0.392 .. 0.3922 nm | Thick film,150 nm polycrystalline Pt film on Si<100> substrate, deposited by electron beam evaporation method at a rate of 0.7 nm/sec, values obtained by X-Ray diffraction analysis. | Thin Solid Films,275(1996), p.23 | | Young's Modulus | 170 GPa | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |
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