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| Property | Value | Conditions | Reference |
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| Friction coefficient | 0.04 | LPCVD n+type film ,at the begining & from an abrupt increase in friction during scratching, width of scratch(1.5 um) at about 17-20 mN normal load(measured from SEM images),critical load=9 mN. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.59 | | Friction coefficient | 0.42 | LPCVD n+type film ,at the end of scratching & from an abrupt increase in friction during scratching, width of scratch(1.5 um) at about 17-20 mN normal load(measured from SEM images),critical load=9 mN. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.59 | | Friction coefficient(final) | 0.42 | LPCVD film,n+type( phosphorous doped),Values obtained during scratching,critical load=9 mN,width of scratch(by SEM observations)=1.5 um,slight ploughing at the tip into the film right at the beginning. | J.Mater.Res.,Vol.12,No.1,Jan1997, p.59 | | Friction coefficient(initial) | 0.04 | LPCVD film,n+type( phosphorous doped),Values obtained during scratching,critical load=9 mN,width of scratch(by SEM observations)=1.5 um,slight ploughing at the tip into the film right at the beginning. | J.Mater.Res.,Vol.12,No.1,Jan1997, p.59 | | Friction coefficient,final | 0.05 | LPCVD n+type film,sliding against a spherical diamond tip (radius=20um)at 10 mN normal load, 7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,final | 0.16 | LPCVD n+type film, sliding against a single-crystal sapphire ball(diameter=3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,initial | 0.05 | LPCVD n+type film,sliding against a spherical diamond tip (tip radius, 20 um) at 10 mN normal load, 7.0 mm stroke length, 0.1 Hz frequency, and 1.0 mm/sec average linear speed for a sliding distance of 4 m under an ambient tempoerature of 22+-1 deg C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,initial | 0.16 | LPCVD film,n+type,sliding against a single-crystal sapphire ball(diameter,3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,micro | 0.04 | Scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Friction coefficient,micro | 0.05 | Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Hardness | 11.5 GPa | LPCVD,n+type(phosphorous doped),obtained by nanodentation at a load of 0.2 mN and indentation depth of 25 nm at peak load. | J.mater.Res,Vol. 12,No.1,Jan1997, p.59 | | Hardness | 10.5 GPa | LPCVD,n+type(phosphorous doped),values obtained by nanodentation at a load of 15 mN and indentation depth of 289 nm at peak load. | J.mater.Res,Vol. 12,No.1,Jan1997, p.59 | | Hardness,nanoindentation(at 100uN) | 12.5 GPa | Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Internal stress | -0.18 GPa | LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um. | Sensors and Actuators,20(1989), p.138 | | Roughness(Rms) | 1.45 nm | LPCVD film,n+type(phosphorous doped), value measured using AFM at a scan size of 1 um x 1 um. | J. Mater. Res., Vol. 12 No. 1, Jan 1997, p.60 | | Roughness(Rms) | 1.07 | Scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Roughness(Rms) | 0.16 | Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Scratch depth,micro(at 40uN) | 18 nm | Scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Scratch depth,micro(at 40uN) | 18 nm | Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Shear Modulus | 69 GPa | Equivalent to rigidity modulus,MCNC MUMPS Process, URL:http://titan.me.jhu.edu/~sharpe/ptt/ptt.html, Value deducted from the Young's modulus (169 GPa) and poisson ratio (0.22) by G = E{2(1 + v)} | W.Sharpe,B.Yuan,R.Vaidyanathan,R.Edwards, Proceedings of the 10th MEMS Workshop,Nagoya,Japan,1997, p.424-429 | | Strain,Compressive | 0.006 .. 0.007 | LPCVD,thickness=230nm,oxide type=3.5um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Strain,Compressive | 0.0035 .. 0.0045 | LPCVD,thickness=230nm,oxide type=3.5um PSG, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer,annealed in N2 for 20 min at 1100C. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Strain,Compressive | 0.0035 .. 0.0045 | LPCVD,thickness=800 nm,oxide type=1.7 um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Strain,Compressive | 0.004 .. 0.005 | LPCVD,thickness=1.45um ,oxide type=1.1 um thermally grown, unannealed,value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Stress,Compressive | 1.4 .. 1.6 GPa | LPCVD,thickness=230nm,oxide type=3.5um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Stress,Compressive | 0.8 .. 1 GPa | LPCVD,thickness=230nm,oxide type=3.5um PSG, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer,annealed in N2 for 20 min at 1100C. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Stress,Compressive | 0.8 .. 1 GPa | LPCVD,thickness=800 nm,oxide type=1.7 um PSG,unannealed, value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Stress,Compressive | 0.9 .. 1.1 GPa | LPCVD,thickness=1.45um ,oxide type=1.1 um thermally grown, unannealed,value measured locally by observing the relaxation of a silicon overhang over an oxide underlayer. | J.Appl.Phys,Vol.54,No.8,August 1983, p.4675 | | Stress,residual | 290 MPa | Undoped,thickness=2.5um ,using wafer curvature experiments, as film is deposited. | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.345 | | Stress,residual | 270 MPa | Undoped,thickness=5 um ,using wafer curvature experiments, as film is deposited. | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.345 | | Stress,residual | 350 MPa | Undoped,thickness=2.5 um ,using wafer curvature experiments, after undergoing a wet oxidation at 1000C for 107min with the oxide layer subsiquently stripped. | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.345 | | Stress,residual | 190 MPa | Undoped,thickness=5 um ,using wafer curvature experiments, after undergoing a wet oxidation at 1000C for 107min with the oxide layer subsiquently stripped. | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.345 | | Tensile stress | -5.2 .. 18.8 MPa | Thick film,value is for thickness higher than 10um,CVD film, deposited at RP(reduced press) or atm press,temperature of deposition from 870 to 1000C,grown on top of a standard LPCVD polysilicon on top of a 1um sacrificial SiO2 layer,assuming biaxial stress, value obtained from relation between Raman shift and stress. | Sensors & Actuators,A51(1995), p.11 | | Wear depth,micro(at 40uN) | 25 nm | Lapped, scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Young's Modulus | 201 GPa | LPCVD,n+type(phosphorous doped),obtained by nanodentation at a load of 0.2 mN and indentation depth of 25 nm at peak load. | J.mater.Res,Vol. 12,No.1,Jan1997, p.59 | | Young's Modulus | 176 GPa | LPCVD,n+type(phosphorous doped),values obtained by nanodentation at a load of 15 mN and indentation depth of 289 nm at peak load. | J.mater.Res,Vol. 12,No.1,Jan1997, p.59 | | Young's Modulus | 120 .. 180 GPa | In-situ B-doped ,for thickness upto 10um ,obtained by lateral resonant structure method. | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.347 | | Young's Modulus | 152 .. 171 GPa | Obtained from laser induced ultrasonic surface wave method for a thickness of 0.4-0.5 um,choosing an intermediate density. | Thin solid films 290-291(1996), p.309 | | Young's Modulus | 160 GPa | LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um. | Sensors and Actuators,20(1989), p.138 |
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