Material: Silicon Dioxide (SiO2), film
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| Property↑↓ | Value↑↓ | Conditions↑↓ | Reference↑↓ |
|---|---|---|---|
| Biaxial Modulus | 43 .. 77 GPa | Used in microfabricated flow chambers for optical measurements, value obtained by indirect measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.5 um, Wet,temp=950 C | IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida , p.223 |
| Coefficient of static friction | 0.2 | Used as a mover,min voltage to remove the mover=1320 V, bottom of the mover is glass plate,film condition=1um & deposited by CVD method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.31 | Used as a mover,min voltage to remove the mover=1650 V, bottom of the mover is glass plate,film condition: 0.08 um & deposited by Sol-gel method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.18 | Used as a mover,min voltage to move the mover=1250 V,bottom of the mover is glass plate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.33 | Used as a mover,min voltage to remove the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.080 um & deposited by Sol-gel method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.38 | Used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,film conditon:1 um & deposited by CVD method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.09 | Used as a mover,min voltage to move the mover=775 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Density | 2200 kg/m^3 | Thermal-dry grown film,thickness=0.325 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Density | 2200 kg/m^3 | Sputtered grown film,thickness=0.4 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um) ,assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Density | 2200 kg/m^3 | Thermal-wet grown film,thickness=0.425 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cromium. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Density | 2200 kg/m^3 | Thermal-wet grown,thickness=0.425um,values are calculated using electrostatically deflectable membrans and Cr for metallization(thickness of 0.015um),assuming density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Friction coefficient,micro | 0.01 | PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Friction coefficient,micro | 0.04 | Dry oxidized Si<111>,using nonotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Friction coefficient,micro | 0.04 | Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Hardness,nanoindentation(at 100uN) | 18 GPa | PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Hardness,nanoindentation(at 100uN) | 17 GPa | Dry oxidized Si<111>,using nonotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Hardness,nanoindentation(at 100uN) | 14.4 GPa | Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Poisson's Ratio | 0.17 | Value obtained by micro-indentation test for thermally grown SiO2 film on a silicon<111> wafer. | Thin Solid Films,283(1996), p.15 |
| Roughness(Rms) | 1.5 | PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Roughness(Rms) | 0.11 | Dry oxidized Si<111>,using nonotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Roughness(Rms) | 0.25 | Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Scratch depth,micro(at 40uN) | 8 nm | PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Scratch depth,micro(at 40uN) | 16 nm | Dry oxidized Si<111>,using nonotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Scratch depth,micro(at 40uN) | 17 nm | Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Static frictional force(max) | 0.000709 N | Used as a mover,min voltage to remove the mover=1320 V, bottom of the mover is glass plate,film condition=1um & deposited by CVD method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.001107 N | Used as a mover,min voltage to remove the mover=1650 V, bottom of the mover is glass plate,film condition: 0.08 um & deposited by Sol-gel method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.000635 N | Used as a mover,min voltage to move the mover=1250 V,bottom of the mover is glass plate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.000885 N | Used as a mover,min voltage to remove the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.080 um & deposited by Sol-gel method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.001009 N | Used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,film conditon:1 um & deposited by CVD method on silicon wafer. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.000244 N | Used as a mover,min voltage to move the mover=775 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Strain,built-in | 0.0047 | Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V. | IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175 |
| Strain,limiting | 0.112 | Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V. | IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175 |
| Strain,max.local | 0.0007 | Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V. | IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175 |
| Stress | -320 MPa | LPCVD,temp=920 C,Nf=1.46,BHF etch rate=1570(A/min),EDP etch rate=300(A/hr) | Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31 |
| Stress,residual | -0.275 .. -0.225 GPa | Used in microfabricated flow chambers for optical measurements, value obtained by indirect measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.5 um, Wet,temp=950 C | IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida , p.223 |
| Thermal conductivity | 1.1 W/m/K | Glass at temp=200 C. | CRC Materials Science and Engineering Handbook, p.289 |
| Wear depth,micro(at 40uN) | 5 nm | PECVD oxide coated Si<111>,using nanotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Wear depth,micro(at 40uN) | 14 nm | Dry oxidized Si<111>,using nonotribology method(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Wear depth,micro(at 40uN) | 18 nm | Wet oxidized Si<111>,using nanotribology techniques(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 |
| Young's Modulus | 70 GPa | Value obtained by micro-indentation test for thermally grown SiO2 film on a silicon<111> wafer. | Thin Solid Films,283(1996), p.15 |
| Young's Modulus | 74 GPa | Used for electrothermal Bimorphs | IEEE Micro Electro Mechanical Systems Workshop,Feb 1993, Florida, p.25 |
| Young's Modulus | 75 GPa | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |
| Young's Modulus | 75 GPa | Ideal memory bridge,area=500 um2,length=30 um,width=3 um, thickness=300 A,switching voltage==11 V. | IEEE Micro Electro Mechanical Systems Workshop,Feb 1990,Napa Vally, California, p.175 |
| Young's Modulus | 69 GPa | Thermal-dry grown film,thickness=0.325 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Young's Modulus | 92 GPa | Sputtered grown film,thickness=0.4 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um) ,assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cr films.The accuracy of Young's Modulus is +- 20%. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Young's Modulus | 57 GPa | Thermal-wet grown film,thickness=0.425 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.015um ),assuming density of 7200kg/m/m/m & Young's Modulus of 180 GPa for Cromium. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Young's Modulus | 46 .. 68 GPa | Thermal-wet grown,thickness=0.425um,values are calculated using electrostatically deflectable membrans and Cr for metallization(thickness of 0.015um),assuming density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |