MEMS and Nanotechnology ClearinghouseMaterial: Silicon Nitride (Si3N4), film
To purchase MEMS-related materials, supplies, equipment, wafers, etc.,please visit the links section of the MEMSNet site.
| Property | Value | Conditions | Reference |
|---|---|---|---|
| Biaxial Modulus | 249 .. 311 GPa | LPCVD film,used in microfabricated flow chambers for optical measurements, value obtained by direct measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.15um, | IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida, p.223 |
| Density | 3100 kg/m^3 | Sputtered film,thickness=0.29 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um),assumi ng density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |
| Internal stress | 0.99 .. 1.01 GPa | LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um. | Sensors and Actuators,20(1989), p.138 |
| Strain,limiting | 0.037 | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |
| Stress | 1440 MPa | LPCVD,temp=820 C,Nf=2.01,BHF etch rate<50(A/min),EDP etch rate=400(A/hr) | Solid-State Sensors and Actuators Workshop,Hilton Head Island, South Carolina,June 1994, p.31 |
| Stress,internal | 0.11 GPa | PECVD film grown on 0.2 um LPCVD Silicon Nitride, calculated by using Load-Deflection of composite rectangular membranes,thickness=0.5 um. | Sensors and actuators,20(1989), p.138 |
| Stress,residual | 0.97 .. 1.03 GPa | LPCVD film,used in microfabricated flow chambers for optical measurements, value obtained by direct measurements of composite Si3N4/SiO2 windows using load deflection measurements,thickness=0.15um, | IEEE Micro Electro Mechanical Systems Workshop,Feb 1993,Florida, p.223 |
| Young's Modulus | 380 GPa | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |
| Young's Modulus | 210 GPa | PECVD film grown on 0.2 um LPCVD Silicon Nitride film, calculated by using Load-Deflection of composite rectangular membranes,thickness=0.5 um. | Sensors and actuators,20(1989), p.138 |
| Young's Modulus | 290 GPa | LPCVD film,calculated by using Load-Deflection of composite rectangular membranes,thickness=0.2 um. | Sensors and Actuators,20(1989), p.138 |
| Young's Modulus | 104 .. 156 GPa | Sputtered film,thickness=0.29 um, values are calculated using electrostatically deflectable me mbrans and Cr for metallization(thickness of 0.01 um),assumi ng density of 7200kg/m/m/m & Young's modulus of 180 GPa for Cr films. | IEEE Transactions on electron devices,Vol.ED25,No.10,Oct1978, p.1249 |