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| Property | Value | Conditions | Reference |
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| Coefficient of static friction | 0.16 | Wafer,used as a mover,min voltage to remove the mover=1176 V, bottom of the mover is glass plate | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Coefficient of static friction | 0.38 | Wafer,used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,thickness=0.5 mm. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Coordination number | 4 | Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses. | Applied Surface Science,106(1996), p.433 | | Density | 2330 kg/m^3 | Solid Density | CRC Materials Science and Engineering Handbook, p.46 | | Density | 2330 kg/m^3 | Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses. | Applied Surface Science,106(1996), p.433 | | Elastic recovery during unloading | 0.56 | Si<001> substrate,uncoated,using nanoindentation method and load displacement curves for calculation. | Thin Solid Films,246(1994), p.108 | | Friction coefficient | 0.05 | Undoped silicon,at the begining of scratching & from an abrupt increase in friction during scratching, width of scratch(1.25um) at about 17-20 mN normal load(measured from SEM images),critical load=10 mN. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.59 | | Friction coefficient | 0.25 | P+type silicon<100>,at the begining of scratching & from an abrupt increase in friction during scratching, width of scratch(1.75 um) at about 17-20 mN normal load(measured from SEM images),critical load=7 mN. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.59 | | Friction coefficient | 0.45 .. 0.6 | P+type silicon<100> ,at the end of scratching & from an abrupt increase in friction during scratching, width of scratch(1.75 um) at about 17-20 mN normal load(measured from SEM images),critical load=7 mN. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.59 | | Friction coefficient | 0.45 | Undoped silicon ,at the end of scratching & from an abrupt increase in friction during scratching, width of scratch(1.25 um) at about 17-20 mN normal load(measured from SEM images),critical load=10 mN. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.59 | | Friction coefficient | 0.03 | Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97 | | Friction coefficient,final | 0.11 | Single crystal silicon<100>,undoped,sliding against a spherical diamond tip (radius=20um)at 10 mN normal load, 7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,final | 0.11 | Single crystal silicon<100>,p+type ,sliding against a spherical diamond tip (radius=20um)at 10 mN normal load, 7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,final | 0.65 | Single crystal silicon<100>,p+type, sliding against a single-crystal sapphire ball(diameter=3mm)7.0 mm stroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,final | 0.33 | Single crystal silicon<100>,undoped, sliding against a single-crystal sapphire ball(diameter=3mm)7.0 mm stroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,initial | 0.11 | Single crystal silicon<100>,p+type,sliding against a spherical diamond tip (tip radius, 20 um) at 10 mN normal load, 7.0 mm stroke length, 0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4 m under an ambient temperature of 22 +-1 deg C and a relative humidity of about 45 +-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,initial | 0.09 | Single crystal silicon<100>,undoped,sliding against a spherical diamond tip (tip radius,20um)at 10 mN normal load, 7.0 mm stroke length, 0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4 m under an ambient temperature of 22 +-1 deg C and a relative humidity of about 45 +-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,initial | 0.37 | Single crystal silicon<100>,undoped,sliding against a single-crystal sapphire ball(diameter,3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,initial | 0.69 | Single crystal silicon<100>,p+type,sliding against a single-crystal sapphire ball(diameter,3mm) at 10 mN normal load,7.0 mmstroke length,0.1 Hz frequency,and 1.0 mm/sec average linear speed for a sliding distance of 4m under an ambient temperature of about 22+-1 C and a relative humidity of about 45+-5% RH. | J.Mater.Res,Vol.12,No.1,Jan 1997, p.60 | | Friction coefficient,micro | 0.04 | Single crystal<110>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Friction coefficient,micro | 0.03 | Single crystal<100>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Friction coefficient,micro | 0.02 | C+ implanted Si<111> | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Hardness | 13 GPa | Silicon<100>,single crystal,undoped obtained by nano indentation at a load of 0.2mN with indentation depth at peak load 24nm. | J.mater.Res,Vol.12,No.1,Jan1997, p.59 | | Hardness | 11.9 GPa | Silicon<100>,single crystal,undoped,values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 267 nm. | J.mater.Res,Vol. 12,No.1,Jan1997, p.59 | | Hardness | 5.1 GPa | Silicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 0.2 mN with indentation depth at peak load 44 nm. | J.mater.Res,Vol.12,No.1,Jan1997, p.59 | | Hardness | 8.7 GPa | Silicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 318 nm. | J.mater.Res,Vol.12,No.1,Jan1997, p.59 | | Hardness(at 100uN) | 11.7 GPa | Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97 | | Hardness,load-off | 36.3 GPa | Si<001> substrate,uncoated,using nanoindentation method and load displacement curves for calculation. | Thin Solid Films,246(1994), p.108 | | Hardness,load-on | 7.1 GPa | Si<001> substrate,uncoated,using nanoindentation method and load displacement curves for calculation. | Thin Solid Films,246(1994), p.108 | | Hardness,nanoindentation(at 100uN) | 18.6 GPa | C+ implanted Si<111> | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Hydrogen content | 0 | Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses. | Applied Surface Science,106(1996), p.433 | | Poisson's Ratio | 0.22 | Silicon substrate,isotropic & linearly thermoelastic. | Mechanics of Materials,23(1996), p.314 | | Poisson's Ratio | 0.27 | Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses. | Applied Surface Science,106(1996), p.433 | | Poisson's Ratio | 0.278 | Material property used in the finite element computations of ultra microhardness indentation of thin films,both coating and substrate are assumed to be homogenous and elastic/plastic. | Thin solid films 290-291(1996), p.363 | | Roughness (RMS) | 0.08 nm | Undoped,single crystal,measured using AFM at a scan size of 1 um x 1 um. | J. Mater. Res. Vol. 12 No. 1, Jan 1997, p.60 | | Roughness(Rms) | 0.23 nm | Single crystal silicon<100>,p+type(boron doped), value measured using AFM at a scan size of 1 um x 1 um. | J. Mater. Res., Vol. 12 No. 1, Jan 1997, p.60 | | Roughness(Rms) | 0.11 | Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97 | | Roughness(Rms) | 0.09 | Single crystal<110>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Roughness(Rms) | 0.12 | Single crystal<100>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Roughness(Rms) | 0.33 | C+ implanted Si<111> | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Scratch depth(at 40uN) | 20 nm | Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97 | | Scratch depth,micro(at 40uN) | 20 nm | Single crystal<110>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Scratch depth,micro(at 40uN) | 25 nm | Single crystal<100>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Scratch depth,micro(at 40uN) | 20 nm | C+ implanted Si<111> | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Specific heat | 702.24 J/kg/K | At Temp=25 C. | CRC Materials Science and Engineering Handbook, p.260 | | Static frictional force(max) | 0.000562 N | Wafer,used as a mover,min voltage to remove the mover=1176 V, bottom of the mover is glass plate | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Static frictional force(max) | 0.001009 N | Wafer,used as a mover,min voltage to move the mover=1575 V, bottom of the mover is Silicon substrate,thickness=0.5 mm. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Wear depth(at 40uN) | 27 nm | Single crystal,orientation <111>,scan size=500X500 nm2,using nanotribology studies(AFM/FFM). | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California, Feb 1996, p.97 | | Wear depth,micro(at 40uN) | 23 nm | C+ implanted Si<111> | IEEE Micro Electro Mechanical Systems Workshop,SanDiego, California,Feb 1996, p.97 | | Young's Modulus | 165 GPa | Silicon substrate,isotropic & linearly thermoelastic. | Mechanics of Materials,23(1996), p.314 | | Young's Modulus | 179 GPa | Silicon<100>,single crystal,undoped obtained by nano indentation at a load of 0.2mN with indentation depth at peak load 24nm. | J.mater.Res,Vol.12,No.1,Jan1997, p.59 | | Young's Modulus | 202 GPa | Silicon<100>,single crystal,undoped,values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 267 nm. | J.mater.Res,Vol. 12,No.1,Jan1997, p.59 | | Young's Modulus | 62 GPa | Silicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 0.2 mN with indentation depth at peak load 44 nm. | J.mater.Res,Vol.12,No.1,Jan1997, p.59 | | Young's Modulus | 125 GPa | Silicon<100>,single crystal,P+type(boron doped),values obtained by nano indentation at a load of 15 mN with indentation depth at peak load 318 nm. | J.mater.Res,Vol.12,No.1,Jan1997, p.59 | | Young's Modulus | 163 .. 188 GPa | Wafer,Si<111>,value obtained by using micro-indentation test. | Thin Solid Films,283(1996), p.13 | | Young's Modulus | 160 GPa | Silicon<111>,crystalline,undoped polished, obtained by SAW technique,using the ns Nd:YAG at 355 nm for launching and the probe beam deflection arrangement for detecting SAW pulses. | Applied Surface Science,106(1996), p.433 | | Young's Modulus | 127 GPa | Material property used in the finite element computations of ultra microhardness indentation of thin films,both coating and substrate are assumed to be homogeneous and elastic/plastic. | Thin solid films 290-291(1996), p.363 |
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