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| Property | Value | Conditions | Reference |
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| Coefficient of static friction | 0.12 | Used as a mover,min voltage to move the mover=1000 V, bottom of the mover is glass plate,film condition:0.273 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Coefficient of static friction | 0.3 | Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Coefficient of static friction | 0.3 | Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:0.273 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Static frictional force(max) | 0.000407 N | Used as a mover,min voltage to move the mover=1000 V, bottom of the mover is glass plate,film condition:0.273 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Static frictional force(max) | 0.000797 N | Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:1.4698 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 | | Static frictional force(max) | 0.000797 N | Used as a mover,min voltage to move the mover=1400 V,bottom of the mover is Silicon substrate,film condition:0.273 um deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
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