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Material: Tungsten (W), film

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Property↑↓Value↑↓Conditions↑↓Reference↑↓
Coefficient of static friction0.35Used as a mover,min voltage to move the mover=1750 V,bottom of the mover is glass plate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Coefficient of static friction0.33Used as a mover,min voltage to move the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.001246 NUsed as a mover,min voltage to move the mover=1750 V,bottom of the mover is glass plate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Static frictional force(max)0.000885 NUsed as a mover,min voltage to move the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate.IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151
Strain,limiting0.01Thin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
Young's Modulus410 GPaThin film,used in semiconductor fabrication.IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174
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