Material: Tungsten (W), film
To purchase MEMS-related materials, supplies, equipment, wafers, etc.,please visit the links section of the MEMSNet site.
| Property↑↓ | Value↑↓ | Conditions↑↓ | Reference↑↓ |
|---|---|---|---|
| Coefficient of static friction | 0.35 | Used as a mover,min voltage to move the mover=1750 V,bottom of the mover is glass plate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Coefficient of static friction | 0.33 | Used as a mover,min voltage to move the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.001246 N | Used as a mover,min voltage to move the mover=1750 V,bottom of the mover is glass plate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Static frictional force(max) | 0.000885 N | Used as a mover,min voltage to move the mover=1475 V,bottom of the mover is Silicon substrate,film condition:0.0605 um & deposited by vacuum-evaporation method on glass substrate. | IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991, Nara,Japan, p.151 |
| Strain,limiting | 0.01 | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |
| Young's Modulus | 410 GPa | Thin film,used in semiconductor fabrication. | IEEE,Micro Electro Mechanical Systems Workshop,Feb 1990, Napa Vally,California, p.174 |