Material: Zinc Oxide (ZnO), film

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Property↑↓	Value↑↓	Conditions↑↓	Reference↑↓
Dielectric constant,relative	10.8 .. 11	Poly crystalline film used for piezoelectric actuation, film deposited by rf magnetron sputtering method using a manganese-doped target,substrate at temp=240 C	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991,Nara, Japan, p.118
Electrical resistivity	2.5e+06 .. 1e+07 Ω*m	Poly crystalline film used for piezoelectric actuation, film deposited by rf magnetron sputtering method using a manganese-doped target,substrate at temp=240 C	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991,Nara, Japan, p.118
Piezoelectric coefficient	10.5 .. 11.5 pC/N	Poly crystalline film used for piezoelectric actuation, film deposited by rf magnetron sputtering method using a manganese-doped target,substrate at temp=240 C	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991,Nara, Japan, p.118
Stress,internal	1.7 .. 3e+08 Pa	Poly crystalline film used for piezoelectric actuation, film deposited by rf magnetron sputtering method using a manganese-doped target,substrate at temp=240 C	IEEE Micro Electro Mechanical Systems Workshop,Jan-Feb 1991,Nara, Japan, p.118