I believe the 300oC chamber ruined the Cr layer. Why don't
try to etch off the SiN and see if the dots remain there?
H3PO4 can etch SiN without etching the gold layer.


> dear colleagues
>      I have been working on a PECVD SiN 2000A dielectric
> directly on Au layer (In a new STS PECVD equip.capactive
> coupled plasma, 8" plates,temperature 300 centidegree
> ).However the film is full of uniformly scattered black
> dots 1 micron or less (film extrusion under SEM )in
> diameter. No such dots found on SiN on Silicon surface.
> Can anyone give me some explain and/or improvement advise.
> BTW,Need I deposite oxide before SiN deposition? can you
> give me a good way to pattern the SiN without affecting
> the Au/Cr beneath? ThX in advance.
>
>
> ¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡ÖÂ
> Àñ£¡
>
>
> ¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡miaomin
>
¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡miaomin@ime.pku.edu.cn
>
¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡2005-05-13
>
>
>
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Best Regards,
Kin