Dear all

I would like to get advices for aluminum etch by rie. I need a
anisotrophy etching for 2um thickness of aluminum with 1um width of
bridges. Since the thickness is larger than the width. Anisotrophy is
very important. I tried 10mTorr and 300W,
BCl3(40sccm),Cl2(10sccm),CHCl3(3sccm) and got the best result so far but
not enough. WOuld you give me a piece of advice about my process
parameters?

I have used Shipley 1827 as a sacrificial below the aluminum layer and a
mask on the aluminum layer. After rie etching, it was hard to remove
both PR by acetone and 1112A PR remover. I tried O2 plasma cleaning but
it built oxide layer on aluminum pattern that is undesirable in my
application. Would you recommand me any other ways to remove them?

Last one, actually I etched aluminum in RIE by two times on different
pattern. I found the first etched region had a slower etching rate than
unetched region. Do you have an idea why and how I can avoid it?



Thanks very much in advance.

Byungki Kim
from GeorgiaTech