Re: Passivation material for Si KOH-etching and Protection method
robert lyness
1997-11-12
shpaek wrote:
>
> Dear MEMS ;
> I'm searching a passivation material for Si KOH-etching.
> It takes a long time for Si etching and
> I must protect front side of wafer.
> Al layer is deposited on the Front side.
> Does anyone tell me the material and method of protection?
>
> Si etch thickness ; 450 micron
> Si etch solution ; KOH + IPA
>
> I'll wait for your quick response.
>
>
> Sincerely yours.
>
> Perhaps you could sputter 1500 Angstroms of chrome. This metal can be
> etched in a proprietary etct made by Transene Corporation in Danvers,
> MA., USA. I suggest you could also etch the chrome using a silicon
> nitride deposition on top of the chrome as a secondary mask. This would
> provide added protection during the silicon etching.
>
> Good luck.