Hi all,
I am trying to ash polyimide PI2610 patterns using
Plasma-finish asher. My polyimide patterns are 50 um x
50 um and about 2.2 um thick. Masking layer for
polyimide is SiNx layer. However ashing process seems
to be slow (60 ~ 90 minutes). My recipe is:
O2 400 sccm
N2 50 sccm
Pressure 200 Pa
Power 400 W .
In additionally, thin film of 1200 A of gold beneath
PI2610 is etched. There is black residue on gold film.
Could anyone advice me a better PI ashing recipe,
which can prevent gold layer and ash PI2610 faster?
Thank in advance
Chi Anh
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