Hello,
I have a couple of questions about LPCVD processing of low stress silicon
nitride.
* I am searching for some processing parameters for making thinn
(<1µm) low stress silicon nitride membranes with the use of a LPCVD. We are
about to set-up an LPCVD at our facility but I am in short supply of decent
parameters to start out with. Is there someone who could help me?
* Is it possible to make a low stress silicon nitride with silane
(SiH4) instead of dichlorsilane (SiCl2H2) gas?
Thanks
Marcus Törndahl
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Marcus Törndahl (PhD student, MScEE)
Department of Electrical Measurements/LTH
Lund University
Ole Römers väg 3
SE-221 00 Lund
Sweden