Hi all,
I am looking for a supplier for low temperature Gallium
arsenide.
I have the layer structure drawn for you right below which
should answer all your questions.
i-GaAs
1.0µm
Growth Temperature = Approximately 250 ºC
Anneal 500 ºC, 30 min
Our Main requirement is that the carrier life time should be less than 300fsec
i-GaAs
1000Å
3 Semi insulating High Resistivity GaAs Substrate
Resistivity > 5 Mega ohm-cm
400 600 µm thick
Thanks
sharmila
---------------------------------
Do you Yahoo!?
Yahoo! Finance Tax Center - File online. File on time.