Dear all,
I try to deposit the ferroelectric thin films (bismuth
titanate)on substrates Si/SiO2/Ti/Pt and Si/SiO2/RuO2
by RF magnetron sputtering. But both the samples
facing the problem of "short circuit capasitor" after
the deposition of top electrode. May i know what are
the possible reasons of the problem?
Thanks!
from,
Chong Cheong Wei
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