Can you advise any parameters to control sidewall angle of a 500um thru
wafer etch? I need to obtain a negative sidewall profile no greater than 1
degree across a 4" substrate with varying diameters(~150um dia.).
Eric Miller advised maybe the ICP power and/or the
pressure are major contributors.
My intial posting is below.
Thanks in advance for any advice,
Paul
Sent: Tuesday, February 10, 2004 7:02 AM
Subject: [mems-talk] DRIE sidewall angle
>What is the expected tolerance for sidewall angle when DRIE 'etching a Si
>substrate 500um thick?
>
>I need to etch an arrayed die pattern consisting of two holes 125um and
>155um diameter. The two holes are spaced 150 um apart and the die are
~1mm
>apart. I want to etch 125 um diameter hole through the 500um thick wafer
>and obtain a negative sidewall profile no greater than 1 degree and a
>backside hole diameter of 125um +17um / -0um. Likewise, I need the 155um
>diameter hole to have a negative sidewall profile no greater than 1 degree
>and a backside hole diameter of 155um +17um / -0um.
>
>Thank you in advance for any guidance,
>
>Paul
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