Good day all,
I am wondering if anyone can help me with the following question by perhaps
pointing me to the appropriate litterature:
I would like to etch vertical trenches in silicon substrates using wet etch
solutions such as KOH. To what angle with respect to the major flat do I need to
pattern my trenches in order to ensure that my sidewalls are vertical (i.e. 90
degrees)?
Your help is much appreciated!
I thank you in advance...
Best regards,
Nancy
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