>Hello,
>
>I want to etch silicon using SiO2 mask. At the
>temperature of 85 (C), after 75 minutes, KOH attacks
>to the SiO2 mask. The etchant solution is water: 80
>cc, Isopropyl alcohol: 20 cc, koh: 30 gr. What can I
>do to etch silicon?
>
>Regards,
>Mahdi Bagheri
Hi Mahdi,
The etching is probably due to pinholes in your oxide layer. Try placing
a low stress nitride layer between 500A - 2000A on top of your oxide. This
should provide you with the protection you need.
Phil Tabada
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