Are you sure of your result?
Such a dramatic change should be reflected on the film stochiometry
(SixOy), dielectric strength (= Maximum breakdown field) and refractive
index. What do your ellipsometric measurements show re thickness and
refractive index?
Regards,
Pierre x286
-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of amol kumar singh
Sent: November 8, 2004 11:43
To: MEMS-talk@memsnet.org
Subject: [mems-talk] quality of gate oxide (SiO2)
Dear All,
I have measured the dieletric constant of my thermally grown gate oxide
on Si as 2.7 from CV measurement of MOS devices. Can some body suggest
the possible cause of such a low value. ideally it should be close to
3.8 or 3.9
Are there ways to improve the dielectric costant of SiO2 grown on Si by
thermal oxidation? I mean how can one grow good quality oxide on Si and
are there any effects of flow rate of oxygen being used?
Thanks in advance,
regards,
Amol Kumar Singh
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