Hi Craig,
we use oxide wafers from which the oxide has been strippe on one side using
BOE, and then use a hot TMAH solution (~20%) to wet etch the backside down
to what we need.
Regards,
Jobert van Eisden
CNSE- SUNY Albany
-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
On Behalf Of Craig Lowrie
Sent: Thursday, November 11, 2004 9:32 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Wafer Thickness
Hello,
I am process restricted to using a 400 um thick silicon wafer but require a
thickness of 300 um. Is there a possibility of using some kind of
post-processing "grinding" step or something similar to achieve this? What
would be the practical concerns of performing this if it is possible?
Regards,
Craig
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