Hi,
I am trying to use negative e-beam resists, SU-8/mA-N 2405 as etch
masks to etch 2 microns of silicon oxide lying underneath the resist.
The etcher is a plama etcher with CHF3/O2/CHF4
Does anyone has any information about the stability of these resists
to plasma etch ?, I want to know if it will be able to withstand the
resist for the time it takes to etch 2 microns of Si-oxide
Thanks