Zhu,
HCl is not your best choice to etch Ti. Try H2O2. It will etch very fast
and even faster when heated.
Brent
"X.P. Zhu" wrote:
> A layer of Ti was deposited on substrate by e-beam.
> But I can not make pattern on it by HCl. Is there an
> oxidation layer on Ti film which protects it? If so,
> how long does it take to form an oxidation layer after
> the film exposed to the air? And how to remove this
> layer by wet or dry etching? Thanks a lot!