Hello all,
I have some questions about depositing teflon(or teflon-like)
1. If there are some cavites on silicon substrate. I want to deposit teflon on
Si surface but not on Si3N4
(Si3N4 is in the cavity, as the figure).
How do I remove the teflon on Si3N4 easily after the CVD teflon process(or
other teflon deposit process)??
I know that the adhesion between teflon and Si3N4 is bad, may I immerse the
wafer in acetone(or something else)
to remove the teflon on Si3N4??
I can't use photolithography process, because the height of Si3N4 patterns
are much lower than Si. PR can't coater well on it.
Si Si
——
——
╲ ï¼
╲ ï¼
╲ ï¼
— ——
Si3N4
2. After removing the teflon on Si3N4, I will use RIE(CF4) to remove Si3N4.
Will CF4 plasma attack teflon (I need the hydrophobic property of teflon)???
Thanks for your advices.