Hello,
We are making plans to set up an ITO deposition
system, and have decided to either sputter an ITO
target, or reactively sputter an In/Sn target in a
Ar/O2 plasma (assuming In/Sn mixed at the right
ratio).
I assume sputtering an ITO target might be easier to
control and more repeatable, but I don't know for
sure. Does anyone else know? Is there any reason to
prefer one method over the other?
Thank you for your insight.
regards,
Aaron Glatzer