Hello All, I need your help in figuring out how to fabricate the following
stack:
Substrate: Silicon Wafer
First layer: A material that is 2-3 microns thick that has an index of
diffraction at 785 nm of around 1.33-1.39 (as close as water as possible).
Second Layer: 10 microns or thicker of SiO2 with an index of around 1.46.
I realize the challenge is the material with the index of < 1.4. I am wondering
if spin-on-glass would be a solution for this layer? Also, can layers of 10
microns and thicker of SiO2 be grown in PECVD without stress or cracking
problems?
I tried to to shift the index of SiO2 below 1.46. I only have N20, Silane, and
N2 available. I was unsuccessful and only obtained an index of 1.44 at 785nm.
Is it possible to adjust the index a little lower?
Is sol-gel or other material a solution?
Thank you,
Scott