Sorry, I didn't see the message until just now. I was trying to get as
high as possible, so su8 2025 was spun at 1000 rpm. The sample was
settled for 5 min and heated on hotplate with temperature ramping up
from room temperature to 95 degree. After 10 min at 95 degree,
temperature is ramped down before 5 min exposure at 4.5 mW/cm^2. The
post exposure baking is the same as pre-bake. Basically, the 10 um gap
is still filled by su8 after development.
Thanks in advance for your suggestion.
On 3/7/07, Sebastien Jiguet wrote:
>
> Dear Liu Yu,
>
> What was your SU-8 process to pattern 50 µm thick film?
> Normally it should be possible to obtain 10 µm gap depending on the
> interface nature.
>