Hi, I want to get low stress SiNx (tensile) by PECVD (Oxford PlasmaLab System
100),the Process Parameters are as followings, could you tell me which one is
suit for me.Or is there any other better one?
1 SiH4/NH3/N2 30/50/1960 Power 17W RF 13.56MHz Pressure 0.9Torr Temperature
250
2 SiH4/NH3/N2 2.5/4/100 Power 100W RF 13.56MHz Pressure 0.9Torr Temperature
250
3 SiH4/NH3/N2 20/20/980 Power HF/LF 25W/20W 13.56MHz 16s /380KHz 4s Pressure
0.65Torr Temperature 250
4 5%SiH4/95%N2 40
N2 900
Pressure 0.6mTorr Temperature 250 Power 40W RF 13.56MHz
And if I change the gas flow with same scale, for exsample: SiH4/NH3/N2
20/20/980 to SiH4/NH3/N2 2/2/98, the properties of film will be changed? such
as stress, refractive index, etc.
Best regards,
Xu Yan