will the SOI fabrication process affect the anodic
bonding
matthew king
2007-04-28
--- Brubaker Chad wrote:
> Matthew,
>
> 1000A? - you may have to get to 100's of volts to
> get enough current through to effect the bond - what
> kind of setup are you using? - you may want to try a
> stepped voltage approach, 200V for 30 sec, 400V for
> 30 sec... etc until you've achieved your bond (if
> its possible).
>
> On the bonder I am used to (EVG520IS - we
> manufacture them), we use double sided heating, and
> can supply up to 2000 volts (applied in a planar
> matter).
>
> If you are using the most common "home made" setup,
> stacking the wafers on a hotplate (glass up) and
> applying the negative potential as a point source.
> You may be limited in voltage, and in ionic mobiity
> (since the heating is occurring away from the glass,
> which needs the mobility), by your setup.
Dear Chad,
Thank you for your reply. Sorry for misunderstanding
caused by my question. By 'tens of volts', I am not
talking about the anodic bonding, just the insulating
property of the thermally grown oxide. You mail
contains the answer YES:1000A is thick enough to
withstand 100's of volts.
As to the bonding equipment, we are using Karl Suss
SB6.
Best regards,
Matthew King