Colleagues,
I'm manufacturing micro-capacitors. In doing so I put down an AlN layer as a
dielectric between the plates via reactive sputtering.
During manufacturing I need to pattern the AlN-surface with Photoresist
AZ9260.
The problem I'm having at this step, is, that my Developer AZ400K 1:4
(Developer : H2O) @ 27C takes off the AlN layer for some reason. It attacks
it and makes it peel off.
However, XRD shows a clear 0002-peak and EDX is fine. The layer is 2microns
thick. Underneath the AlN you can find Cu, or Al as a capacitor plate or
highly B-doped Si.
I need to mention here that I don't have the possibility to take off the
native oxide with a plasma prior to AlN deposition.
So, what is the problem with my AlN layer and how can I improve my layer?
Might the native oxide on the above mentioned materials cause that effect?
I appreciate your help
Best Regards,
Sebastian