Daniela,
You might be able to bond these wafers at a lower temperature ( 320- 350C) by
increasing/optimizing the voltage and time instead. You should see a much
reduced bow at lower processing temps with the same glass wafers.
Thanks
Sumant
SUSS Microtec
-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On
Behalf Of Daniela Kögler
Sent: Wednesday, September 24, 2008 9:28 AM
To: 'General MEMS discussion'
Subject: [mems-talk] Anodic bonding
Hi,
I have to anodically bond SOI-Wafers on Borosilkatglas-Wafers. The
parameters I use are 430 °C and 1000 V.
The problem is that the wafer package after the bond process has a very high
bow (220 um +).
Does anybody now how to reduce the bow?
Thanks!
Best regards
Daniela