Please try softbake temperature 80C and time of soft bake 20 minutes.  it will
work.

with regards
jaibir



On Thu, 18 Dec 2008 Yinyan Gong wrote :
>I used shipley 1813 and the spin speed is 4000rpm (thickness of photoresist is
about 1.3um). After spin coating the wafer is softbaked in oven at 90C for
30min. But after the wafer is developed in MIF 319, there is always some
photoresist left in the exposed area with 10um in width but the photoresist was
removed in the exposed area of 100um by 100um. I tried to increase the exposure
time, but the problem still exist? Could that possibly because the mask and
wafer are not contacted? Thanks.
>
>Laura


Jaibir Sharma
Reasearch Scholar(PhD)
Electrical Department,
IIT Madras,
Chennai - 36
INDIA

Phone:044-22575444(off)
      09445311513(home)