Alcatel report low stress and very high WER with a Si3N4 film deposited
at 20 C.
-Greg
On Tue, 22 Sep 1998 10:15:27 -0400 (EDT), Carlos Mastrangelo wrote:
>
>You can deposit films by UV photopolymerization at very low
>temperatures --reported down to -10C back in the mid 70s.
>
> -CHM
>
>On Wed, 9 Sep 1998, lee ki seong wrote:
>
>>
>> hello, colleague
>> It might be silly question to somebody.
>>
>> but I think it's impossible.
>>
>> Is there anybody who try to deposit some film at very low temperature.
>>
>> In PECVD plasma usually occur a little high temp because mobility of
>> electrons are better as temperature higher.
>>
>> I think it'll possible ,if there is something to break the eletron orbit
>> from nuclear.
>>
>> If there is anybody to make a new process , would you join me and
>> make revolution.
>>
>> with thanks.
>>
>>
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